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SSM6J424TU Datasheet - Toshiba

SSM6J424TU Silicon P-Channel MOSFET

SSM6J424TU Features

* (1) AEC-Q101 qualified (Note 1) (2) 1.5-V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 54 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 36 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 26 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 22.5 mΩ (max) (@VGS = -4.5 V) Note 1: For detail information, please contact

SSM6J424TU Datasheet (246.12 KB)

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Datasheet Details

Part number:

SSM6J424TU

Manufacturer:

Toshiba ↗

File Size:

246.12 KB

Description:

Silicon p-channel mosfet.

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