SSM6J412TU Datasheet (Toshiba Semiconductor)

SSM6J412TU, Silicon P-Channel MOSFET

SSM6J412TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM6J412TU ○ Power Management Switch Applications Unit: mm +0.1 0.3-0.05 1.5-V drive Low ON-resistance: RDS(ON) = 99.6 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 67.8 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 51.4 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 42.7 mΩ (max) (@VGS = -4.5 V) 2.1±0.1 1.7±0.1 1 6 2 5 2.0±0.1 1.3±0.1 0.65 0.65 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit