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SSM6J412TU Silicon P-Channel MOSFET

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Description

SSM6J412TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM6J412TU ○ Power Management Switch Applications Unit: mm +0.1 0.3-.

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Applications

* Unit: mm +0.1 0.3-0.05
* 1.5-V drive
* Low ON-resistance: RDS(ON) = 99.6 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 67.8 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 51.4 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 42.7 mΩ (max) (@VGS = -4.5 V) 2.1±0.1 1.7±0.1 1 6 2 5 2.0±0.1 1.3±0.1 0.65 0.65 Absolu

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SSM6J412TU Silicon P-Channel MOSFET Toshiba Semiconductor
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