Datasheet Specifications
- Part number
- SSM6J771G
- Manufacturer
- Toshiba ↗
- File Size
- 222.32 KB
- Datasheet
- SSM6J771G-Toshiba.pdf
- Description
- Silicon P-Channel MOSFET
Description
MOSFETs Silicon P-Channel MOS SSM6J771G 1.Applications * BATFETs * Power Management Switches 2..
Features
* (1) High VGSS voltage : ±12V (2) High VDSS voltage : -20V (3) Low drain-source on-resistance : RDS(ON) = 26 mΩ (typ. ) (@VGS = -4.5 V,ID = -3.0A) RDS(ON) = 24 mΩ (typ. ) (@VGS = -8.0 V,ID = -3.0A) RDS(ON) = 23 mΩ (typ. ) (@VGS = -8.5 V,ID = -3.0A) 3. Packaging and Pin Assignment SSM6J771G WCSP6C A1.Applications
* BATFETsSSM6J771G Distributors
📁 Related Datasheet
📌 All Tags