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SSM6J771G Datasheet - Toshiba

SSM6J771G Silicon P-Channel MOSFET

SSM6J771G Features

* (1) High VGSS voltage : ±12V (2) High VDSS voltage : -20V (3) Low drain-source on-resistance : RDS(ON) = 26 mΩ (typ.) (@VGS = -4.5 V,ID = -3.0A) RDS(ON) = 24 mΩ (typ.) (@VGS = -8.0 V,ID = -3.0A) RDS(ON) = 23 mΩ (typ.) (@VGS = -8.5 V,ID = -3.0A) 3. Packaging and Pin Assignment SSM6J771G WCSP6C A1.

SSM6J771G Datasheet (222.32 KB)

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Datasheet Details

Part number:

SSM6J771G

Manufacturer:

Toshiba ↗

File Size:

222.32 KB

Description:

Silicon p-channel mosfet.

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SSM6J771G Silicon P-Channel MOSFET Toshiba

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