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SSM6J206FE Datasheet - Toshiba Semiconductor

SSM6J206FE High-Speed Switching Applications

SSM6J206FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J206FE ○ Power Management Switch Applications ○ High-Speed Switching Applications 1.8 V drive Low ON-resistance: Ron = 320 mΩ (max) (@VGS = -1.8 V) Ron = 186 mΩ (max) (@VGS = -2.5 V) Ron = 130 mΩ (max) (@VGS = -4.0 V) www.DataSheet4U.com Unit: mm Absolute Maximum Ratings (Ta = 25˚C) Characteristic Drain source voltage Gate source voltage Drain current Drain power dissipation Channel t.

SSM6J206FE Datasheet (236.74 KB)

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Datasheet Details

Part number:

SSM6J206FE

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

236.74 KB

Description:

High-speed switching applications.

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SSM6J206FE High-Speed Switching Applications Toshiba Semiconductor

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