SSM6J206FE Datasheet (Toshiba Semiconductor) - High-Speed Switching Applications

SSM6J206FE, High-Speed Switching Applications

SSM6J206FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J206FE ○ Power Management Switch Applications ○ High-Speed Switching Applications 1.8 V drive Low ON-resistance: Ron = 320 mΩ (max) (@VGS = -1.8 V) Ron = 186 mΩ (max) (@VGS = -2.5 V) Ron = 130 mΩ (max) (@VGS = -4.0 V) www.DataSheet4U.com Unit: mm Absolute Maximum Ratings (Ta = 25˚C) Characteristic Drain source voltage Gate source voltage Drain current Drain power dissipation Channel t