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SSM6J206FE High-Speed Switching Applications

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Description

SSM6J206FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J206FE ○ Power Management Switch Applications ○ High-Speed Switching Applic.

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Applications

* ○ High-Speed Switching Applications
* 1.8 V drive Low ON-resistance: Ron = 320 mΩ (max) (@VGS = -1.8 V) Ron = 186 mΩ (max) (@VGS = -2.5 V) Ron = 130 mΩ (max) (@VGS = -4.0 V) www. DataSheet4U. com Unit: mm Absolute Maximum Ratings (Ta = 25˚C) Characteristic Drain
* source volt

SSM6J206FE Distributors

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SSM6J206FE High-Speed Switching Applications Toshiba Semiconductor
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