SSM6J213FE Datasheet (Toshiba Semiconductor)

SSM6J213FE, Silicon P-Channel MOSFET

SSM6J213FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM6J213FE ○ Power Management Switch Applications 1.5-V drive Low ON-resistance: RDS(ON) = 250 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 178 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 133 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 103 mΩ (max) (@VGS = -4.5 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS -20 V Gate-source voltage VGSS ±8 V Drain