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SSM6J216FE Datasheet - Toshiba Semiconductor

SSM6J216FE_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

SSM6J216FE

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

215.76 KB

Description:

Silicon p-channel mosfet.

SSM6J216FE, Silicon P-Channel MOSFET

SSM6J216FE Features

* (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 88.1 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 56.0 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 39.3 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 32.0 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Pin Configuration ES6 SSM6J216FE 1.2.5.6 : Drain 3 : Ga

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