Part number:
SSM6J216FE
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
215.76 KB
Description:
Silicon p-channel mosfet.
* (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 88.1 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 56.0 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 39.3 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 32.0 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Pin Configuration ES6 SSM6J216FE 1.2.5.6 : Drain 3 : Ga
SSM6J216FE Datasheet (215.76 KB)
SSM6J216FE
Toshiba ↗ Semiconductor
215.76 KB
Silicon p-channel mosfet.
📁 Related Datasheet
SSM6J212FE Silicon P-Channel MOSFET (Toshiba Semiconductor)
SSM6J213FE Silicon P-Channel MOSFET (Toshiba Semiconductor)
SSM6J214FE Silicon P-Channel MOSFET (Toshiba Semiconductor)
SSM6J215FE Silicon P-Channel MOSFET (Toshiba Semiconductor)
SSM6J21TU High Current Switching Applications (Toshiba Semiconductor)
SSM6J205FE High-Speed Switching Applications (Toshiba Semiconductor)
SSM6J206FE High-Speed Switching Applications (Toshiba Semiconductor)
SSM6J207FE Silicon P-Channel MOSFET (Toshiba Semiconductor)
SSM6J23FE Silicon P-Channel MOSFET (Toshiba Semiconductor)
SSM6J25FE Silicon P-Channel MOSFET (Toshiba Semiconductor)