Datasheet Specifications
- Part number
- SSM6J216FE
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 215.76 KB
- Datasheet
- SSM6J216FE_ToshibaSemiconductor.pdf
- Description
- Silicon P-Channel MOSFET
Description
MOSFETs Silicon P-Channel MOS (U-MOS) SSM6J216FE 1.Applications * Power Management Switches 2..
Features
* (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 88.1 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 56.0 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 39.3 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 32.0 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Pin Configuration ES6 SSM6J216FE 1.2.5.6 : Drain 3 : GaSSM6J216FE Distributors
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