Datasheet4U Logo Datasheet4U.com

SSM6J216FE

Silicon P-Channel MOSFET

SSM6J216FE Features

* (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 88.1 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 56.0 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 39.3 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 32.0 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Pin Configuration ES6 SSM6J216FE 1.2.5.6 : Drain 3 : Ga

SSM6J216FE Datasheet (215.76 KB)

Preview of SSM6J216FE PDF

Datasheet Details

Part number:

SSM6J216FE

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

215.76 KB

Description:

Silicon p-channel mosfet.

📁 Related Datasheet

SSM6J212FE Silicon P-Channel MOSFET (Toshiba Semiconductor)

SSM6J213FE Silicon P-Channel MOSFET (Toshiba Semiconductor)

SSM6J214FE Silicon P-Channel MOSFET (Toshiba Semiconductor)

SSM6J215FE Silicon P-Channel MOSFET (Toshiba Semiconductor)

SSM6J21TU High Current Switching Applications (Toshiba Semiconductor)

SSM6J205FE High-Speed Switching Applications (Toshiba Semiconductor)

SSM6J206FE High-Speed Switching Applications (Toshiba Semiconductor)

SSM6J207FE Silicon P-Channel MOSFET (Toshiba Semiconductor)

SSM6J23FE Silicon P-Channel MOSFET (Toshiba Semiconductor)

SSM6J25FE Silicon P-Channel MOSFET (Toshiba Semiconductor)

TAGS

SSM6J216FE Silicon P-Channel MOSFET Toshiba Semiconductor

Image Gallery

SSM6J216FE Datasheet Preview Page 2 SSM6J216FE Datasheet Preview Page 3

SSM6J216FE Distributor