SSM6J21TU Datasheet (Toshiba Semiconductor) - High Current Switching Applications

SSM6J21TU, High Current Switching Applications

SSM6J21TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ) SSM6J21TU High Current Switching Applications Suitable for high-density mounting due to compact package Low on resistance: Ron = 88 mΩ (max) (@VGS = -2.5 V) Unit: mm www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD