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SSM6J801R Datasheet - Toshiba

SSM6J801R Silicon P-Channel MOSFET

SSM6J801R Features

* (1) 1.5 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 88.4 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 56.0 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 39.7 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 32.5 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Pin Assignment TSOP6F SSM6J801R 1, 2, 5, 6: Drain 3: Ga

SSM6J801R Datasheet (289.24 KB)

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Datasheet Details

Part number:

SSM6J801R

Manufacturer:

Toshiba ↗

File Size:

289.24 KB

Description:

Silicon p-channel mosfet.

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SSM6J801R Silicon P-Channel MOSFET Toshiba

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