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SSM6J207FE Silicon P-Channel MOSFET

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Description

SSM6J207FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J207FE ○ High-Speed Switching Applications * 4 V drive * L.

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Applications

* 4 V drive
* Low ON-resistance: Ron = 491 mΩ (max) (@VGS =
* 4 V) Ron = 251 mΩ (max) (@VGS =
* 10 V) Unit: mm Absolute Maximum Ratings (Ta = 25˚C) Characteristic Symbol Rating Unit Drain
* source voltage VDS -30 V Gate
* source voltage VGSS ±

SSM6J207FE Distributors

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SSM6J207FE Silicon P-Channel MOSFET Toshiba Semiconductor
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