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SSM6J207FE Datasheet - Toshiba Semiconductor

SSM6J207FE Silicon P-Channel MOSFET

SSM6J207FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J207FE ○ High-Speed Switching Applications 4 V drive Low ON-resistance: Ron = 491 mΩ (max) (@VGS = 4 V) Ron = 251 mΩ (max) (@VGS = 10 V) Unit: mm Absolute Maximum Ratings (Ta = 25˚C) Characteristic Symbol Rating Unit Drain source voltage VDS -30 V Gate source voltage VGSS ± 20 V Drain current DC ID Pulse IDP -1.4 A -2.8 Drain power dissipation P.

SSM6J207FE Datasheet (204.87 KB)

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Datasheet Details

Part number:

SSM6J207FE

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

204.87 KB

Description:

Silicon p-channel mosfet.

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SSM6J207FE Silicon P-Channel MOSFET Toshiba Semiconductor

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