SSM6J512NU Datasheet - Toshiba

SSM6J512NU - Silicon P-Channel MOSFET

SSM6J512NU Features

* (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 24.0 mΩ (typ.) (@VGS = -1.8 V) RDS(ON) = 18.3 mΩ (typ.) (@VGS = -2.5 V) RDS(ON) = 14.3 mΩ (typ.) (@VGS = -4.5 V) 3. Packaging and Pin Assignment UDFN6B SSM6J512NU 1,2,5,6: Drain 3: Gate 4: Source ©2015-2021 1 Toshiba El

SSM6J512NU-Toshiba.pdf

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Datasheet Details

Part number:

SSM6J512NU

Manufacturer:

Toshiba ↗

File Size:

437.09 KB

Description:

Silicon p-channel mosfet.

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SSM6J512NU Silicon P-Channel MOSFET Toshiba