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SSM6J512NU - Silicon P-Channel MOSFET

Toshiba

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Datasheet Details

Part number	SSM6J512NU
Manufacturer	Toshiba ↗
File Size	437.09 KB
Description	Silicon P-Channel MOSFET
Datasheet	SSM6J512NU-Toshiba.pdf

SSM6J512NU Product details

Features

(1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 24.0 mΩ (typ. ) (@VGS = -1.8 V) RDS(ON) = 18.3 mΩ (typ. ) (@VGS = -2.5 V) RDS(ON) = 14.3 mΩ (typ. ) (@VGS = -4.5 V) 3. Packaging and Pin Assignment UDFN6B SSM6J512NU 1,2,5,6: Drain 3: Gate 4: Source ©2015-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2015-07 2021-09-17 Rev.2.0 SSM6J512NU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
) Character.

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Published: Dec 15, 2023 |