SSM6J51TU Datasheet - Toshiba Semiconductor

SSM6J51TU Silicon P-Channel MOSFET

SSM6J51TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) SSM6J51TU High Current Switching Applications Unit: mm Suitable for high-density mounting due to compact package Low on-resistance: Ron = 54 mΩ (max) (@VGS = -2.5 V) 85 mΩ (max) (@VGS = -1.8 V) 150mΩ(max) (@VGS = -1.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS -12 V Gate-Source voltage VGSS ±8 V Drain current DC ID Pulse .

SSM6J51TU_ToshibaSemiconductor.pdf