SSM6J505NU Datasheet, Mosfet, Toshiba Semiconductor

SSM6J505NU Features

• Mosfet (1) 1.2 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 61 mΩ (max) (@VGS = -1.2 V) RDS(ON) = 30 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 21 mΩ (max) (@VGS = -1.8 V) RDS(

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Part number:

SSM6J505NU

Manufacturer:

Toshiba ↗ Semiconductor

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272.23kb

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📄 Datasheet

Description:

Silicon p-channel mosfet.

SSM6J505NU Application

• Applications
• Power Management Switches 2. Features (1) 1.2 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 61 mΩ (max

TAGS

SSM6J505NU

Toshiba Semiconductor

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