SSM6J53FE Datasheet - Toshiba Semiconductor

SSM6J53FE High Current Switching Applications

SSM6J53FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6J53FE ○ High-Speed Switching Applications ○ Power Management Switch Applications 1.5 V drive Suitable for high-density mounting due to compact package Unit : mm 1.6±0.05 1.2±0.05 0.2±0.05 0.5 1.6±0.05 1.0±0.05 Low on-resistance : Ron = 136 mΩ (max) (@VGS = -2.5 V) : Ron = 204 mΩ (max) (@VGS = -1.8 V) : Ron = 364 mΩ (max) (@VGS = -1.5 V) Symbol VDS VGSS DC Pulse ID IDP PD (Note 1) Tch Tstg .

SSM6J53FE Features

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SSM6J53FE Datasheet (224.36 KB)