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SSM6J53FE Datasheet - Toshiba Semiconductor

SSM6J53FE_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

SSM6J53FE

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

224.36 KB

Description:

High current switching applications.

SSM6J53FE, High Current Switching Applications

SSM6J53FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6J53FE ○ High-Speed Switching Applications ○ Power Management Switch Applications 1.5 V drive Suitable for high-density mounting due to compact package Unit : mm 1.6±0.05 1.2±0.05 0.2±0.05 0.5 1.6±0.05 1.0±0.05 Low on-resistance : Ron = 136 mΩ (max) (@VGS = -2.5 V) : Ron = 204 mΩ (max) (@VGS = -1.8 V) : Ron = 364 mΩ (max) (@VGS = -1.5 V) Symbol VDS VGSS DC Pulse ID IDP PD (Note 1) Tch Tstg

SSM6J53FE Features

* products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of

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