SSM6J503NU Datasheet - Toshiba Semiconductor

SSM6J503NU Silicon P-Channel MOSFET

SSM6J503NU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM6J503NU Power Management Switch Applications 1.5V drive Low ON-resistance: RDS(ON)= 89.6 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 57.9 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 41.7 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 32.4 mΩ (max) (@VGS = -4.5 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDSS 20 V Gate-Source voltage VGSS ±8 .

SSM6J503NU-ToshibaSemiconductor.pdf