SSM6J501NU Datasheet - Toshiba

SSM6J501NU P-Channel MOSFET

SSM6J501NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOSⅥ) SSM6J501NU Power Management Switch Applications 1.5V drive Low ON-resistance: RDS(ON) = 43.0 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 26.5 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 19.0 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 15.3 mΩ (max) (@VGS = -4.5 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDSS 20 V Gate-Source voltage VGSS ±8 .

SSM6J501NU Datasheet (205.27 KB)