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SSM6J511NU Datasheet - Toshiba

SSM6J511NU Silicon P-Channel MOSFET

SSM6J511NU Features

* (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 13.5 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 10 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Pin Assignment UDFN6B SSM6J511NU 1.2.5.6 Drain 3. Gate 4. Source ©2016 Toshiba Corporation 1 Start of commercial production 2015-12 20

SSM6J511NU Datasheet (295.07 KB)

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Datasheet Details

Part number:

SSM6J511NU

Manufacturer:

Toshiba ↗

File Size:

295.07 KB

Description:

Silicon p-channel mosfet.

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