Datasheet Specifications
- Part number
- SSM6J511NU
- Manufacturer
- Toshiba ↗
- File Size
- 295.07 KB
- Datasheet
- SSM6J511NU-Toshiba.pdf
- Description
- Silicon P-Channel MOSFET
Description
MOSFETs Silicon P-Channel MOS (U-MOS) SSM6J511NU 1.Applications * Power Management Switches 2..
Features
* (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 13.5 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 10 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Pin Assignment UDFN6B SSM6J511NU 1.2.5.6 Drain 3. Gate 4. Source ©2016 Toshiba Corporation 1 Start of commercial production 2015-12 20SSM6J511NU Distributors
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