Datasheet Specifications
- Part number
- SSM6J502NU
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 429.56 KB
- Datasheet
- SSM6J502NU-ToshibaSemiconductor.pdf
- Description
- Silicon P-Channel MOSFET
Description
MOSFETs Silicon P-Channel MOS (U-MOS *) SSM6J502NU 1.Applications * Power Management Switches 2..
Features
* (1) 1.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 60.5 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 38.4 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 28.3 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 23.1 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Internal Circuit UDFN6B SSM6J502NU 1,2,5,6: Drain 3: Gate 4: SourceSSM6J502NU Distributors
📁 Related Datasheet
📌 All Tags