SSM6J502NU Datasheet - Toshiba Semiconductor

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SSM6J502NU Silicon P-Channel MOSFET

MOSFETs Silicon P-Channel MOS (U-MOS *) SSM6J502NU 1.Applications * Power Management Switches 2..

SSM6J502NU-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

SSM6J502NU

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

429.56 KB

Description:

Silicon P-Channel MOSFET

Features

* (1) 1.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 60.5 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 38.4 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 28.3 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 23.1 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Internal Circuit UDFN6B SSM6J502NU 1,2,5,6: Drain 3: Gate 4: Source

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SSM6J502NU Silicon P-Channel MOSFET Toshiba Semiconductor

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