SSM6J50TU Datasheet - Toshiba Semiconductor

SSM6J50TU Silicon P-Channel MOSFET

SSM6J50TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ) SSM6J50TU ○ High Current Switching Applications Unit: mm Compact package suitable for high-density mounting Low on-resistance: Ron = Ron = Ron = 205mΩ (max) (@VGS = -2.0 V) 100mΩ (max) (@VGS = -2.5 V) 64mΩ (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS -20 V Gate-Source voltage VGSS ±10 V Drain current DC I.

SSM6J50TU_ToshibaSemiconductor.pdf