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SSM6J507NU Datasheet - Toshiba

SSM6J507NU Silicon P-Channel MOSFET

SSM6J507NU Features

* (1) 4 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 20 mΩ (max) (@VGS = -10 V) RDS(ON) = 28 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 32 mΩ (max) (@VGS = -4.0 V) 3. Packaging and Pin Assignment UDFN6B SSM6J507NU 1.2.5.6 Drain 3. Gate 4. Source ©2015 Toshiba Corporation 1 Start of

SSM6J507NU Datasheet (240.12 KB)

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Datasheet Details

Part number:

SSM6J507NU

Manufacturer:

Toshiba ↗

File Size:

240.12 KB

Description:

Silicon p-channel mosfet.

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