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SSM6J422TU Datasheet - Toshiba

SSM6J422TU Silicon P-Channel MOSFET

SSM6J422TU Features

* (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.5-V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 99.6 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 67.8 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 51.4 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 42.7 mΩ (max) (@VGS = -4.5 V) 3. Pac

SSM6J422TU-Toshiba.pdf

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Datasheet Details

Part number:

SSM6J422TU

Manufacturer:

Toshiba ↗

File Size:

286.11 KB

Description:

Silicon p-channel mosfet.

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