SSM6J401TU - Silicon P-Channel MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	SSM6J401TU
Manufacturer	Toshiba Semiconductor
File Size	438.18 KB
Description	Silicon P-Channel MOSFET
Datasheet	SSM6J401TU-ToshibaSemiconductor.pdf

(1) 4.0 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 145 mΩ (max) (@VGS = -4 V) RDS(ON) = 73 mΩ (max) (@VGS = -10 V) 3. Packaging and Pin Assignment UF6 SSM6J401TU 1,2,5,6: Drain 3: Gate 4: Source ©2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2007-07 2022-07-04 Rev.1.0 SSM6J401TU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
) Characteristics Symbol Rating Unit Drain-source voltage Gate-s.

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Published: Sep 14, 2014 |