SSM6J410TU Silicon P-Channel MOSFET

Toshiba Semiconductor

Description

SSM6J410TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅢ) SSM6J410TU ○ Power Management Switch Applications ○ High-Speed Switchi.

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Datasheet Specifications

Part number: SSM6J410TU
Manufacturer: Toshiba ↗ Semiconductor
File Size: 235.17 KB
Datasheet: SSM6J410TU-ToshibaSemiconductor.pdf
Description: Silicon P-Channel MOSFET

Applications

* ○ High-Speed Switching Applications Unit: mm
* 4-V drive
* Low ON-resistance RDS(ON) = 393mΩ (max) (@VGS =
* 4 V) RDS(ON) = 216mΩ (max) (@VGS =
* 10 V) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage VDSS -30 V Ga

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SSM6J410TU Silicon P-Channel MOSFET Toshiba Semiconductor

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