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SSM6J205FE Datasheet - Toshiba Semiconductor

SSM6J205FE_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

SSM6J205FE

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

182.85 KB

Description:

High-speed switching applications.

SSM6J205FE, High-Speed Switching Applications

SSM6J205FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J205FE High-Speed Switching Applications Power Management Switch Applications 1.8V drive P-ch 2-in-1 Low ON-resistance: Unit: mm Ron = 460 mΩ (max) (@VGS = 1.8 V) Ron = 306 mΩ (max) (@VGS = 2.5 V) Ron = 234 mΩ (max) (@VGS = 4.0 V) www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage Drain current Drain p

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SSM6J205FE High-Speed Switching Applications Toshiba Semiconductor
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