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SSM6J214FE Datasheet - Toshiba Semiconductor

SSM6J214FE Silicon P-Channel MOSFET

SSM6J214FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM6J214FE ○ Power Management Switch Applications 1.8 V drive Low ON-resistance: RDS(ON) = 149.6 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 77.6 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 57.0 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 50.0 mΩ (max) (@VGS = -10 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage Drain current DC Pulse Power dissipation Channel.

SSM6J214FE Datasheet (208.61 KB)

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Datasheet Details

Part number:

SSM6J214FE

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

208.61 KB

Description:

Silicon p-channel mosfet.

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SSM6J214FE Silicon P-Channel MOSFET Toshiba Semiconductor

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