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SSM6J212FE Datasheet - Toshiba Semiconductor

SSM6J212FE Silicon P-Channel MOSFET

SSM6J212FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM6J212FE ○ Power Management Switch Applications 1.5-V drive Low ON-resistance: RDS(ON) = 94.0 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 65.4 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 49.0 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 40.7 mΩ (max) (@VGS = -4.5 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage Drain current DC Pulse Power dissipation Channel.

SSM6J212FE Datasheet (207.13 KB)

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Datasheet Details

Part number:

SSM6J212FE

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

207.13 KB

Description:

Silicon p-channel mosfet.

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SSM6J212FE Silicon P-Channel MOSFET Toshiba Semiconductor

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