SSM6J212FE Silicon P-Channel MOSFET

Toshiba Semiconductor

Description

SSM6J212FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM6J212FE ○ Power Management Switch Applications * 1.5-V driv.

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Datasheet Specifications

Part number: SSM6J212FE
Manufacturer: Toshiba ↗ Semiconductor
File Size: 207.13 KB
Datasheet: SSM6J212FE_ToshibaSemiconductor.pdf
Description: Silicon P-Channel MOSFET

Applications

* 1.5-V drive
* Low ON-resistance: RDS(ON) = 94.0 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 65.4 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 49.0 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 40.7 mΩ (max) (@VGS = -4.5 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Ga

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SSM6J212FE Silicon P-Channel MOSFET Toshiba Semiconductor

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