SSM6J212FE Datasheet (Toshiba Semiconductor)

SSM6J212FE, Silicon P-Channel MOSFET

SSM6J212FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM6J212FE ○ Power Management Switch Applications 1.5-V drive Low ON-resistance: RDS(ON) = 94.0 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 65.4 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 49.0 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 40.7 mΩ (max) (@VGS = -4.5 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage Drain current DC Pulse Power dissipation Channel