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SSM6J825R Silicon P-Channel MOSFET

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Description

MOSFETs Silicon P-Channel MOS SSM6J825R 1.Applications * Power Management Switches 2..

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Features

* (1) 4.0-V drive (2) Low drain-source on-resistance : RDS(ON) = 86 mΩ (max) (@VGS = -4.0 V) RDS(ON) = 73 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 45 mΩ (max) (@VGS = -10 V) 3. Packaging and Pin Assignment TSOP6F SSM6J825R 1, 2, 5, 6: Drain 3: Gate 4: Source ©2021 1 Toshiba Electronic Devices & Storage

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