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SSM6J825R Datasheet - Toshiba

SSM6J825R Silicon P-Channel MOSFET

SSM6J825R Features

* (1) 4.0-V drive (2) Low drain-source on-resistance : RDS(ON) = 86 mΩ (max) (@VGS = -4.0 V) RDS(ON) = 73 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 45 mΩ (max) (@VGS = -10 V) 3. Packaging and Pin Assignment TSOP6F SSM6J825R 1, 2, 5, 6: Drain 3: Gate 4: Source ©2021 1 Toshiba Electronic Devices & Storage

SSM6J825R Datasheet (418.25 KB)

Preview of SSM6J825R PDF

Datasheet Details

Part number:

SSM6J825R

Manufacturer:

Toshiba ↗

File Size:

418.25 KB

Description:

Silicon p-channel mosfet.

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SSM6J825R Silicon P-Channel MOSFET Toshiba

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