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SSM6J808R Datasheet - Toshiba

SSM6J808R Silicon P-Channel MOSFET

SSM6J808R Features

* (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 4-V drive (3) Low drain-source on-resistance : RDS(ON) = 28 mΩ (typ.) (VGS = -10 V) RDS(ON) = 35 mΩ (typ.) (VGS = -4.5 V) RDS(ON) = 38 mΩ (typ.) (VGS = -4 V) 3. Packaging and Internal Circuit SSM6J808R 1: Drain 2: Drain 3: Gate

SSM6J808R Datasheet (373.29 KB)

Preview of SSM6J808R PDF

Datasheet Details

Part number:

SSM6J808R

Manufacturer:

Toshiba ↗

File Size:

373.29 KB

Description:

Silicon p-channel mosfet.

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SSM6J808R Silicon P-Channel MOSFET Toshiba

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