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SSM6P35AFE Datasheet - Toshiba

SSM6P35AFE Silicon P-Channel MOSFET

SSM6P35AFE Features

* (1) 1.2 V drive (2) Low drain-source on-resistance : RDS(ON) = 3.2 Ω (typ.) (@VGS = -1.2 V) RDS(ON) = 2.3 Ω (typ.) (@VGS = -1.5 V) RDS(ON) = 2.0 Ω (typ.) (@VGS = -1.8 V) RDS(ON) = 1.5 Ω (typ.) (@VGS = -2.5 V) RDS(ON) = 1.1 Ω (typ.) (@VGS = -4.5 V) 3. Packaging and Internal Circuit ES6 SSM6P35AFE 1:

SSM6P35AFE Datasheet (212.81 KB)

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Datasheet Details

Part number:

SSM6P35AFE

Manufacturer:

Toshiba ↗

File Size:

212.81 KB

Description:

Silicon p-channel mosfet.

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SSM6P35AFE Silicon P-Channel MOSFET Toshiba

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