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SSM6P35AFE - Silicon P-Channel MOSFET

Toshiba

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Datasheet Details

Part number	SSM6P35AFE
Manufacturer	Toshiba ↗
File Size	212.81 KB
Description	Silicon P-Channel MOSFET
Datasheet	SSM6P35AFE-Toshiba.pdf

SSM6P35AFE Product details

Features

(1) 1.2 V drive (2) Low drain-source on-resistance : RDS(ON) = 3.2 Ω (typ. ) (@VGS = -1.2 V) RDS(ON) = 2.3 Ω (typ. ) (@VGS = -1.5 V) RDS(ON) = 2.0 Ω (typ. ) (@VGS = -1.8 V) RDS(ON) = 1.5 Ω (typ. ) (@VGS = -2.5 V) RDS(ON) = 1.1 Ω (typ. ) (@VGS = -4.5 V) 3. Packaging and Internal Circuit ES6 SSM6P35AFE 1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1 ©2017-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2017-03 2021-02-01 Rev.3.0 SSM6P35AFE.

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Published: Dec 29, 2023 |