SSM6P36FE Datasheet - Toshiba Semiconductor

SSM6P36FE P-Channel MOSFET

SSM6P36FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P36FE ○ Power Management Switches 1.5-V drive Low ON-resistance: Ron = 3.60 Ω (max) (@VGS = -1.5 V) Ron = 2.70 Ω (max) (@VGS = -1.8 V) Ron = 1.60 Ω (max) (@VGS = -2.8 V) Ron = 1.31 Ω (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25 °C) (Common to the Q1, Q2) 1.6±0.05 1.2±0.05 Unit: mm 1 6 1.6±0.05 1.0±0.05 0.5 0.5 0.2±0.05 0.12±0.05 Characteristics Symbol Rating Unit Drain-source vo.

SSM6P36FE_ToshibaSemiconductor.pdf