SSM6P36TU Datasheet - Toshiba Semiconductor

SSM6P36TU MOSFET

SSM6P36TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P36TU ○ Power Management Switches 1.5-V drive Low ON-resistance: Ron = 3.60 Ω (max) (@VGS = -1.5 V) : Ron = 2.70 Ω (max) (@VGS = -1.8 V) : Ron = 1.60 Ω (max) (@VGS = -2.8 V) : Ron = 1.31 Ω (max) (@VGS = -4.5 V) 0.65 0.65 2.0±0.1 1.3±0.1 1 2 3 Unit: mm 2.1±0.1 1.7±0.1 Absolute Maximum Ratings (Ta = 25 °C) Characteristics Drain-source voltage Gate-source voltage Drain current Drain power dissipation Cha.

SSM6P36TU Features

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SSM6P36TU-ToshibaSemiconductor.pdf