SSM6P35FE Datasheet - Toshiba Semiconductor

SSM6P35FE P-Channel MOSFET

SSM6P35FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6P35FE ○ High-Speed Switching Applications ○ Analog Switch Applications 1.2-V drive Low ON-resistance : Ron = 44 Ω (max) (@VGS = -1.2 V) : Ron = 22 Ω (max) (@VGS = -1.5 V) : Ron = 11 Ω (max) (@VGS = -2.5 V) : Ron = 8 Ω (max) (@VGS = -4.0 V) 1.6±0.05 1.0±0.05 0.5 0.5 1.6±0.05 1.2±0.05 Unit: mm 1 6 2 5 3 4 0.2±0.05 Absolute Maximum Ratings (Ta = 25˚C) (Common to the Q1, Q2) 0.12±0.05 0.55±0.05.

SSM6P35FE_ToshibaSemiconductor.pdf