SSM6P16FE Datasheet - Toshiba Semiconductor

SSM6P16FE P-Channel MOSFET

SSM6P16FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(π-MOSVI) SSM6P16FE High Speed Switching Applications Analog Switch Applications Small package Low on-resistance : RDS(ON) = 8 Ω (max) (@VGS = 4 V) : RDS(ON) = 12 Ω (max) (@VGS = 2.5 V) : RDS(ON) = 45 Ω (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Unit: mm Characteristics Symbol Rating Unit Drain-Source voltage Gate-Source voltage Drain curr.

SSM6P16FE_ToshibaSemiconductor.pdf