SSM6P47NU Datasheet - Toshiba Semiconductor

SSM6P47NU MOSFET

SSM6P47NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS VI) SSM6P47NU Power Management Switch Applications 1.5V drive Low ON-resistance: RDS(on) = 242 mΩ (max) (@VGS = -1.5 V) RDS(on) = 170 mΩ (max) (@VGS = -1.8 V) RDS(on) = 125 mΩ (max) (@VGS = -2.5 V) RDS(on) = 95 mΩ (max) (@VGS = -4.5 V) 0.75±0.05 2.0±0.1 B A Unit: mm 2.0±0.1 Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC.

SSM6P47NU Features

* in this document, Unintended Use includes, without limitation, equipment used in nuclear

SSM6P47NU Datasheet (191.30 KB)