Part number:
TC55NEM208AFPN
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
134.83 KB
Description:
Tentative toshiba mos digital integrated circuit silicon gate cmos.
TC55NEM208AFPN_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
TC55NEM208AFPN
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
134.83 KB
Description:
Tentative toshiba mos digital integrated circuit silicon gate cmos.
TC55NEM208AFPN, TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
The TC55NEM208AFPN/AFTN is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by 8 bits.
Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V ± 10% power supply.
Advanced circuit technology provides both high speed and low
TC55NEM208AFPN Features
* Low-power dissipation Operating: 15 mW/MHz (typical) Single power supply voltage of 5 V ± 10% Power down features using CE . Data retention supply voltage of 2.0 to 5.5 V Direct TTL compatibility for all inputs and outputs Wide op
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