TC55NEM208AFPN TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

Toshiba Semiconductor

Description

www.DataSheet4U.com TC55NEM208AFPN/AFTN55,70 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT STATIC RAM DES.
The TC55NEM208AFPN/AFTN is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by 8 bits.

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Datasheet Specifications

Part number: TC55NEM208AFPN
Manufacturer: Toshiba ↗ Semiconductor
File Size: 134.83 KB
Datasheet: TC55NEM208AFPN_ToshibaSemiconductor.pdf
Description: TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

Features

* Low-power dissipation Operating: 15 mW/MHz (typical) Single power supply voltage of 5 V ± 10% Power down features using CE . Data retention supply voltage of 2.0 to 5.5 V Direct TTL compatibility for all inputs and outputs Wide op

Applications

* where high speed, low power and battery backup are required. And, with a guaranteed operating range of
* 40° to 85°C, the TC55NEM208AFPN/AFTN can be used in environments exhibiting extreme temperature conditions. The TC55NEM208AFPN/AFTN is available in a standard plastic 32-pin small-outline

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TC55NEM208AFPN TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Toshiba Semiconductor

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