* Low-power dissipation Operating: 15 mW/MHz (typical) Single power supply voltage of 5 V ± 10% Power down features using CE . Data retention supply voltage of 2.0 to 5.5 V Direct TTL compatibility for all inputs and outputs Wide op
TC55NEM208AFPN Datasheet (134.83 KB)
TC55NEM208AFPN
Toshiba ↗ Semiconductor
134.83 KB
Tentative toshiba mos digital integrated circuit silicon gate cmos.
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TC55NEM208AFPN/AFTN55,70
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
524,288-WORD BY 8-BIT STATIC RAM DES.
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