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TC55NEM208AFTN, TC55NEM208AFPN TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

TC55NEM208AFTN Description

www.DataSheet4U.com TC55NEM208AFPN/AFTN55,70 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT STATIC RAM DES.
The TC55NEM208AFPN/AFTN is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by 8 bits.

TC55NEM208AFTN Features

* Low-power dissipation Operating: 15 mW/MHz (typical) Single power supply voltage of 5 V ± 10% Power down features using CE . Data retention supply voltage of 2.0 to 5.5 V Direct TTL compatibility for all inputs and outputs Wide op

TC55NEM208AFTN Applications

* where high speed, low power and battery backup are required. And, with a guaranteed operating range of
* 40° to 85°C, the TC55NEM208AFPN/AFTN can be used in environments exhibiting extreme temperature conditions. The TC55NEM208AFPN/AFTN is available in a standard plastic 32-pin small-outline

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: TC55NEM208AFTN, TC55NEM208AFPN. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
TC55NEM208AFTN, TC55NEM208AFPN
Manufacturer
Toshiba ↗ Semiconductor
File Size
134.83 KB
Datasheet
TC55NEM208AFPN_ToshibaSemiconductor.pdf
Description
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Note
This datasheet PDF includes multiple part numbers: TC55NEM208AFTN, TC55NEM208AFPN.
Please refer to the document for exact specifications by model.

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📌 All Tags

TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Toshiba Semiconductor
Toshiba Semiconductor TC55NEM208AFTN-like datasheet