TC55NEM208AFTN, TC55NEM208AFPN Datasheet - Toshiba Semiconductor

TC55NEM208AFTN TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

The TC55NEM208AFPN/AFTN is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V ± 10% power supply. Advanced circuit technology provides both high speed and low .

TC55NEM208AFTN Features

* Low-power dissipation Operating: 15 mW/MHz (typical) Single power supply voltage of 5 V ± 10% Power down features using CE . Data retention supply voltage of 2.0 to 5.5 V Direct TTL compatibility for all inputs and outputs Wide op

TC55NEM208AFPN_ToshibaSemiconductor.pdf

TC55NEM208AFTN Datasheet Preview — This datasheet PDF includes multiple part numbers: TC55NEM208AFTN, TC55NEM208AFPN. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

TC55NEM208AFTN, TC55NEM208AFPN

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

134.83 KB

Description:

Tentative toshiba mos digital integrated circuit silicon gate cmos.

Note:

This datasheet PDF includes multiple part numbers: TC55NEM208AFTN, TC55NEM208AFPN.
Please refer to the document for exact specifications by model.

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TC55NEM208AFTN TC55NEM208AFPN TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Toshiba Semiconductor

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