Part number:
TC55NEM216AFTN55
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
219.68 KB
Description:
(tc55nem216aftn55 / tc55nem216aftn77) mos digital integrated circuit silicon gate cmos.
TC55NEM216AFTN55_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
TC55NEM216AFTN55
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
219.68 KB
Description:
(tc55nem216aftn55 / tc55nem216aftn77) mos digital integrated circuit silicon gate cmos.
TC55NEM216AFTN55, (TC55NEM216AFTN55 / TC55NEM216AFTN77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
The TC55NEM216AFTN is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits.
Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V ± 10% power supply.
Advanced circuit technology provides both high speed and low powe
TC55NEM216AFTN55 Features
* Low-power dissipation Operating: 15 mW/MHz (typical) Single power supply voltage of 5 V ± 10% Power down features using CE Data retention supply voltage of 2.0 to 5.5 V Direct TTL compatibility for all inputs and outputs Wide oper
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