* Low-power dissipation Operating: 15 mW/MHz (typical) Single power supply voltage of 5 V ± 10% Power down features using CE Data retention supply voltage of 2.0 to 5.5 V Direct TTL compatibility for all inputs and outputs Wide oper
TC55NEM216AFTN55 Datasheet (219.68 KB)
TC55NEM216AFTN55
Toshiba ↗ Semiconductor
219.68 KB
(tc55nem216aftn55 / tc55nem216aftn77) mos digital integrated circuit silicon gate cmos.
TC55NEM216AFTN55,70
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TENTATIVE
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
262,144-WORD BY 16-BIT FULL CMOS STATIC .
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