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TC55NEM216ASTV77

(TC55NEM216ASTV55 / TC55NEM216ASTV77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

TC55NEM216ASTV77 Features

* Low-power dissipation Operating: 15 mW/MHz (typical) Single power supply voltage of 2.7 to 5.5 V Power down features using CE Data retention supply voltage of 2.0 to 5.5 V Direct TTL compatibility for all inputs and outputs Wide

TC55NEM216ASTV77 General Description

The TC55NEM216ASTV is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.7 to 5.5 V power supply. Advanced circuit technology provides both high speed and low .

TC55NEM216ASTV77 Datasheet (159.27 KB)

Preview of TC55NEM216ASTV77 PDF

Datasheet Details

Part number:

TC55NEM216ASTV77

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

159.27 KB

Description:

(tc55nem216astv55 / tc55nem216astv77) mos digital integrated circuit silicon gate cmos.
TC55NEM216ASTV55,70 www.DataSheet4U.com TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT FULL CMOS STATIC .

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TAGS

TC55NEM216ASTV77 TC55NEM216ASTV55 TC55NEM216ASTV77 MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Toshiba Semiconductor

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