TC55NEM216ASTV55_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
TC55NEM216ASTV77, TC55NEM216ASTV55
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
159.27 KB
Description:
(tc55nem216astv55 / tc55nem216astv77) mos digital integrated circuit silicon gate cmos.
Note:
This datasheet PDF includes multiple part numbers: TC55NEM216ASTV77, TC55NEM216ASTV55.
Please refer to the document for exact specifications by model.
TC55NEM216ASTV77, TC55NEM216ASTV55, (TC55NEM216ASTV55 / TC55NEM216ASTV77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
The TC55NEM216ASTV is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits.
Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.7 to 5.5 V power supply.
Advanced circuit technology provides both high speed and low
TC55NEM216ASTV77 Features
* Low-power dissipation Operating: 15 mW/MHz (typical) Single power supply voltage of 2.7 to 5.5 V Power down features using CE Data retention supply voltage of 2.0 to 5.5 V Direct TTL compatibility for all inputs and outputs Wide
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