TC55NEM216AFTN70 Datasheet, Cmos, Toshiba Semiconductor

TC55NEM216AFTN70 Features

  • Cmos
  • Low-power dissipation Operating: 15 mW/MHz (typical) Single power supply voltage of 5 V ± 10% Power down features u

PDF File Details

Part number:

TC55NEM216AFTN70

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

219.68kb

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📄 Datasheet

Description:

(tc55nem216aftn55 / tc55nem216aftn77) mos digital integrated circuit silicon gate cmos. The TC55NEM216AFTN is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using Tosh

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TC55NEM216AFTN70 Application

  • Applications where high speed, low power and battery backup are required. And, with a guaranteed operating extreme temperature range of
  • 40°

TAGS

TC55NEM216AFTN70
TC55NEM216AFTN55
TC55NEM216AFTN77
MOS
DIGITAL
INTEGRATED
CIRCUIT
SILICON
GATE
CMOS
Toshiba Semiconductor

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