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TC55NEM216AFTN70, TC55NEM216AFTN55 Datasheet - Toshiba Semiconductor

TC55NEM216AFTN70 (TC55NEM216AFTN55 / TC55NEM216AFTN77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

The TC55NEM216AFTN is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V ± 10% power supply. Advanced circuit technology provides both high speed and low powe.

TC55NEM216AFTN70 Features

* Low-power dissipation Operating: 15 mW/MHz (typical) Single power supply voltage of 5 V ± 10% Power down features using CE Data retention supply voltage of 2.0 to 5.5 V Direct TTL compatibility for all inputs and outputs Wide oper

TC55NEM216AFTN55_ToshibaSemiconductor.pdf

This datasheet PDF includes multiple part numbers: TC55NEM216AFTN70, TC55NEM216AFTN55. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

TC55NEM216AFTN70, TC55NEM216AFTN55

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

219.68 KB

Description:

(tc55nem216aftn55 / tc55nem216aftn77) mos digital integrated circuit silicon gate cmos.

Note:

This datasheet PDF includes multiple part numbers: TC55NEM216AFTN70, TC55NEM216AFTN55.
Please refer to the document for exact specifications by model.

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TAGS

TC55NEM216AFTN70 TC55NEM216AFTN55 TC55NEM216AFTN55 TC55NEM216AFTN77 MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Toshiba Semiconductor

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