Description
TC55NEM216AFTN55,70 www.DataSheet4U.com TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT FULL CMOS STATIC .
The TC55NEM216AFTN is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits.
Features
* Low-power dissipation Operating: 15 mW/MHz (typical) Single power supply voltage of 5 V ± 10% Power down features using CE Data retention supply voltage of 2.0 to 5.5 V Direct TTL compatibility for all inputs and outputs Wide oper
Applications
* where high speed, low power and battery backup are required. And, with a guaranteed operating extreme temperature range of
* 40° to 85°C, the TC55NEM216AFTN can be used in environments exhibiting extreme temperature conditions. The TC55NEM216AFTN is available in a plastic 54-pin thin-small-ou
