TK13E25D Datasheet - Toshiba Semiconductor

TK13E25D, Silicon N-Channel MOSFET

MOSFETs Silicon N-Channel MOS (π-MOS) TK13E25D 1.Applications * Switching Voltage Regulators 2..

Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.19 Ω (typ. ) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK13E25D 1: Gate (G) 2: Drain (D)(Heatsink) 3: Source (S) TO-220 4. Absolute Ma

TK13E25D-ToshibaSemiconductor.pdf