TK2Q60D Datasheet - Toshiba Semiconductor

TK2Q60D, Silicon N-Channel MOSFET

TK2Q60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK2Q60D Switching Regulator Applications * Low drain-source ON-re.

Applications

* Low drain-source ON-resistance: RDS (ON) = 3.2 Ω(typ. )
* High forward transfer admittance: |Yfs| = 1.0 S (typ. )
* Low leakage current: IDSS = 10 μA (max) (VDS = 600 V)
* Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 1.5 ± 0.2 6.5 ± 0.2 5.2 ± 0.2 Un

TK2Q60D-ToshibaSemiconductor.pdf