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TK2Q60D - Silicon N-Channel MOSFET

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TK2Q60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK2Q60D Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 3.2 Ω(typ.) • High forward transfer admittance: |Yfs| = 1.0 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) • Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 1.5 ± 0.2 6.5 ± 0.2 5.2 ± 0.2 Unit: mm 0.6 MAX. 1.6 5.5 ± 0.
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