TK35A08N1 Silicon N-Channel MOSFET

Toshiba Semiconductor

Description

MOSFETs Silicon N-channel MOS (U-MOS-H) TK35A08N1 1.Applications * Switching Voltage Regulators 2..

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Datasheet Specifications

Part number: TK35A08N1
Manufacturer: Toshiba ↗ Semiconductor
File Size: 232.04 KB
Datasheet: TK35A08N1-ToshibaSemiconductor.pdf
Description: Silicon N-Channel MOSFET

Features

* (1) Low drain-source on-resistance: RDS(ON) = 10.0 mΩ (typ. ) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit TK35A08N1 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maxim

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TK35A08N1 Silicon N-Channel MOSFET Toshiba Semiconductor

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