Part number:
TK35E08N1
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
244.79 KB
Description:
Silicon n-channel mosfet.
TK35E08N1-ToshibaSemiconductor.pdf
Datasheet Details
TK35E08N1 Features
* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 10.0 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-220 4. Absolute Maximum
TK35E08N1-ToshibaSemiconductor.pdf
Datasheet Details
TK35E08N1
Toshiba ↗ Semiconductor
244.79 KB
Silicon n-channel mosfet.
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TK35E08N1 Distributor