TK35E08N1 Silicon N-Channel MOSFET

Toshiba Semiconductor

Description

TK35E08N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK35E08N1 1.Applications * Switching Voltage Regulators 2..

📥 Download Datasheet

TK35E08N1 Datasheet Preview — Preview of TK35E08N1 PDF

Datasheet Specifications

Part number: TK35E08N1
Manufacturer: Toshiba ↗ Semiconductor
File Size: 244.79 KB
Datasheet: TK35E08N1-ToshibaSemiconductor.pdf
Description: Silicon N-Channel MOSFET

Features

* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 10.0 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-220 4. Absolute Maximum

TK35E08N1 Distributors

📁 Related Datasheet

TK30A06N1 TK30E06N1 TK30J25D TK31A60W TK31E60W TK31E60X

📌 All Tags

TK35E08N1 Silicon N-Channel MOSFET Toshiba Semiconductor

Toshiba Semiconductor TK35E08N1-like datasheet