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TK40E06N1 Datasheet - Toshiba Semiconductor

TK40E06N1 - Silicon N-Channel MOSFET

TK40E06N1 Features

* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 8.4 mā„¦ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 ĀµA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-220 4. Absolute Maximum

TK40E06N1-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TK40E06N1

Manufacturer:

Toshiba ā†— Semiconductor

File Size:

246.34 KB

Description:

Silicon n-channel mosfet.

TK40E06N1 Distributor

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šŸ“Œ All Tags

TK40E06N1 Silicon N-Channel MOSFET Toshiba Semiconductor