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TK40S10K3Z Datasheet - Toshiba Semiconductor

TK40S10K3Z-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TK40S10K3Z

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

245.01 KB

Description:

Silicon n-channel mosfet.

TK40S10K3Z, Silicon N-Channel MOSFET

TK40S10K3Z Features

* (1) (2) (3) (4) AEC-Q101 qualified Low drain-source on-resistance: RDS(ON) = 14.4 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK+

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