Datasheet Specifications
- Part number
- TK40S10K3Z
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 245.01 KB
- Datasheet
- TK40S10K3Z-ToshibaSemiconductor.pdf
- Description
- Silicon N-Channel MOSFET
Description
TK40S10K3Z MOSFETs Silicon N-channel MOS (U-MOS) TK40S10K3Z 1.Applications * * * * Automotive Motor Drivers DC-DC C.
Features
* (1) (2) (3) (4) AEC-Q101 qualified Low drain-source on-resistance: RDS(ON) = 14.4 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK+TK40S10K3Z Distributors
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