* (1) (2) (3) (4) AEC-Q101 qualified Low drain-source on-resistance: RDS(ON) = 14.4 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK+
TK40S10K3Z Datasheet (245.01 KB)
TK40S10K3Z
Toshiba ↗ Semiconductor
245.01 KB
Silicon n-channel mosfet.
TK40S10K3Z
MOSFETs Silicon N-channel MOS (U-MOS)
TK40S10K3Z
1. Applications
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* Automotive Motor Drivers DC-DC C.
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