TK40S10K3Z - Silicon N-Channel MOSFET

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Toshiba Semiconductor

Part number	TK40S10K3Z
Manufacturer	Toshiba Semiconductor
File Size	245.01 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK40S10K3Z Datasheet
Additional preview pages of the TK40S10K3Z datasheet.

(1) (2) (3) (4) AEC-Q101 qualified Low drain-source on-resistance: RDS(ON) = 14.4 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK+ Start of commercial production 1 2011-03 2014-08-04 Rev.5.0 TK40S10K3Z 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source vo.

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Published: Sep 5, 2014 |