Part number:
TK4Q60DA
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
239.17 KB
Description:
Silicon n-channel mosfet.
TK4Q60DA Datasheet (239.17 KB)
* (1) Low drain-source on-resistance: RDS(ON) = 1.7 Ω (typ.) (VGS = 10 V) (2) High forward transfer admittance: |Yfs| = 2.2 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V) (4) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK4Q60DA N
TK4Q60DA Datasheet (239.17 KB)
TK4Q60DA
Toshiba ↗ Semiconductor
239.17 KB
Silicon n-channel mosfet.
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