TK4Q60DA Datasheet - Toshiba Semiconductor

TK4Q60DA, Silicon N-Channel MOSFET

MOSFETs Silicon N-Channel MOS (π-MOS) TK4Q60DA 1.Applications * Switching Voltage Regulators 2..

Features

* (1) Low drain-source on-resistance: RDS(ON) = 1.7 Ω (typ. ) (VGS = 10 V) (2) High forward transfer admittance: |Yfs| = 2.2 S (typ. ) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V) (4) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK4Q60DA N

TK4Q60DA-ToshibaSemiconductor.pdf