Part number:
TK65E10N1
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
245.38 KB
Description:
Silicon n-channel mosfet.
TK65E10N1 Datasheet (245.38 KB)
* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.0 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-220 4. Absolute Maximum
TK65E10N1 Datasheet (245.38 KB)
TK65E10N1
Toshiba ↗ Semiconductor
245.38 KB
Silicon n-channel mosfet.
📁 Related Datasheet
TK65E10N1 N-Channel MOSFET (INCHANGE)
TK65010 BATTERY VOLTAGE MONITOR (TOKO)
TK65015 STEP-UP VOLTAGE CONVERTER WITH VOLTAGE MONITOR (TOKO)
TK65018 CMOS SWITCHED CAPACITOR VOLTAGE CONVERTER WITH REGULATOR (TOKO)
TK65020 STEP-UP VOLTAGE CONVERTER (TOKO)
TK65025 STEP-UP VOLTAGE CONVERTER WITH VOLTAGE MONITOR (TOKO)
TK650A60F Silicon N-Channel MOSFET (Toshiba)
TK650STL CMOS LDO REGULATOR WITH HIGH ACTIVE CONTROL ADVANCED (TOKO)
TK65127 STEP-UP VOLTAGE CONVERTER WITH VOLTAGE MONITOR (TOKO)
TK65130 STEP-UP VOLTAGE CONVERTER WITH VOLTAGE MONITOR (TOKO)
