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TK65E10N1 Datasheet - Toshiba Semiconductor

TK65E10N1-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TK65E10N1

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

245.38 KB

Description:

Silicon n-channel mosfet.

TK65E10N1, Silicon N-Channel MOSFET

TK65E10N1 Features

* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.0 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-220 4. Absolute Maximum

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