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TK65G10N1 - Silicon N-Channel MOSFET

TK65G10N1 Description

TK65G10N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK65G10N1 1.Applications * Switching Voltage Regulators 2..

TK65G10N1 Features

* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source D2PAK Start of commercial production

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Silicon N-Channel MOSFET Toshiba Semiconductor
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