TK65G10N1 Silicon N-Channel MOSFET

Toshiba Semiconductor

Description

TK65G10N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK65G10N1 1.Applications * Switching Voltage Regulators 2..

📥 Download Datasheet

TK65G10N1 Datasheet Preview — Preview of TK65G10N1 PDF

Datasheet Specifications

Part number: TK65G10N1
Manufacturer: Toshiba ↗ Semiconductor
File Size: 240.86 KB
Datasheet: TK65G10N1-ToshibaSemiconductor.pdf
Description: Silicon N-Channel MOSFET

Features

* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source D2PAK Start of commercial production

TK65G10N1 Distributors

📁 Related Datasheet

TK65010 TK65015 TK65018 TK65020 TK65025 TK650A60F

📌 All Tags

TK65G10N1 Silicon N-Channel MOSFET Toshiba Semiconductor

Toshiba Semiconductor TK65G10N1-like datasheet