Part number:
TK65G10N1
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
240.86 KB
Description:
Silicon n-channel mosfet.
TK65G10N1-ToshibaSemiconductor.pdf
Datasheet Details
TK65G10N1 Features
* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source D2PAK Start of commercial production
TK65G10N1-ToshibaSemiconductor.pdf
Datasheet Details
TK65G10N1
Toshiba ↗ Semiconductor
240.86 KB
Silicon n-channel mosfet.
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