TK6A45DA Datasheet, Mosfet, Toshiba Semiconductor

TK6A45DA Features

• Mosfet (1) Low drain-source on-resistance: RDS(ON) = 1.1 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 3.0 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 450 V) (4) Enhan

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Part number:

TK6A45DA

Manufacturer:

Toshiba ↗ Semiconductor

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228.03kb

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📄 Datasheet

Description:

Silicon n-channel mosfet.

TK6A45DA Application

• Applications
• Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.1 Ω (typ.) (2) High forward transfer

TAGS

TK6A45DA

Toshiba Semiconductor

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