TK6A60D N-Channel MOSFET

Toshiba Semiconductor

Description

TK6A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK6A60D Switching Regulator Applications * Low drain-source ON-re.

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Datasheet Specifications

Part number: TK6A60D
Manufacturer: Toshiba ↗ Semiconductor
File Size: 273.33 KB
Datasheet: TK6A60D_ToshibaSemiconductor.pdf
Description: N-Channel MOSFET

Applications

* Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ. )
* High forward transfer admittance: |Yfs| = 3.0 S (typ. )
* Low leakage current: IDSS = 10 μA (max) (VDS = 600 V)
* Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Rating

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TK6A60D N-Channel MOSFET Toshiba Semiconductor

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