TK7A50D Datasheet - Toshiba Semiconductor

TK7A50D N-Channel MOSFET

TK7A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK7A50D Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.5 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC Drain cur.

TK7A50D Features

* act (“Unintended Use”). Unintended

TK7A50D-ToshibaSemiconductor.pdf